smd type ic smd type transistors KDS8333C features n-channel 4.1a,30v r ds(on) = 80m @v gs =10v r ds(on) = 130m @v gs =4.5v p-channel -3.4 a, 30 v r ds(on) = 130 m @v gs =- 10 v r ds(on) = 200 m @v gs =-4.5v low gate charge high performance trench technology for extremely low r ds(on). high power and handling capability in a widely used surface mount package. absolute maximum ratings ta = 25 parameter symbol n-channel p- channel unit drain to source voltage v dss 30 -60 v gate to source voltage v gs 16 20 v drain current continuous (note 1a) 4.1 -3.4 a drain current pulsed 20 -20 a power dissipation for single operation p d w power dissipation for single operation (note 1a) (note 1b) (note 1c) operating and storage temperature t j ,t stg thermal resistance junction to ambient (note 1a) r ja /w thermal resistance junction to case (note 1) r jc /w i d 1.6 p d w 1 0.9 -55to150 78 40 2 4008-318-123 sales@twtysemi.com 1 of 3 http://www.twtysemi.com product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit v gs =0v,i d =250 a n-ch 30 v gs =0v,i d =-250 a p-ch -30 i d =250 a, referenced to 25 n-ch 25 i d =-250 a, referenced to 25 p-ch -22 v ds = 24v, v gs =0v n-ch 1 v ds =-24v,v gs =0v p-ch -1 v gs = 16v, v ds =0v n-ch 100 v gs = 20 v, v ds =0v p-ch 100 v ds =v gs ,i d =250 a n-ch 1 1.7 3 v ds =v gs ,i d =-250 a p-ch -1 -1.8 -3 i d =250 a, referenced to 25 n-ch -4.2 i d =-250 a, referenced to 25 p-ch 3.7 v gs =10v,i d =4.1a 67 80 v gs =10v,i d =4.1a,t j =125 81 130 v gs =4.5v,i d =3.2 a 103 145 v gs =-10v,i d =-3.4a 105 130 v gs =-10v,i d =-3.4 a,tj = 125 167 200 v gs =-4.5v,i d =-2.5a 147 220 v gs =10v,v ds =5v n-ch 10 v gs =-10v,v ds =-5v p-ch -5 v ds =5v,i d =4.1a n-ch 9 v ds =-5v,i d = -3.4a p-ch 5 n-channel n-ch 282 v ds =10v,v gs = 0 v,f = 1.0 mhz p-ch 185 n-ch 49 p-channel p-ch 56 v ds =-10v,v gs = 0 v,f = 1.0 mhz n-ch 20 p-ch 26 v gs = 15 mv, f=1.0mhz n-ch 2.3 v gs =-15 mv, f=1.0mhz p-ch -9.6 n-channel n-ch 4.5 9 v dd =10v,i d = 1 a, p-ch 4.5 9 v gs =4.5v,r gen =6 (note 2) n-ch 6 12 p-ch 13 23 p-channel n-ch 19 34 v dd =-10v,i d =-1a, p-ch 11 20 v gs =-4.5v,r gen =6 (note 2) n-ch 1.5 3 p-ch 2 4 n-channel n-ch 4.7 6.6 v ds =10v,i d =4.1a,v gs =4.5v p-ch 4.1 5.7 r gen =6 (note 2) n-ch 0.9 p-channel p-ch 0.8 v ds =-10v,i d =-3.4a,v gs =-4.5v(note 2) n-ch 0.6 p-ch 0.4 v gs(th) gate threshold voltage n-ch b vdss drain-source breakdown voltage breakdown voltage temperature coefficient gate-body leakage i gss i dss zero gate voltage drain current gate threshold voltage temperature coefficient r ds(on) static drain-source on-resistance i d(on) on-state drain current r ds(on) static drain-source on-resistance input capacitance output capacitance reverse transfer capacitance g fs forward transconductance turn-off delay time t f turn-off fall time t d(on) turn-on delay time tr turn-on rise time q gd gate-drain charge p-ch v mv/ a na v mv/ m a s pf q g q gs t d(off) c iss c oss c rss testconditons ns ns nc nc pf pf ns ns gate resistance r g nc total gate charge gate-source charge 4008-318-123 sales@twtysemi.com 2 of 3 http://www.twtysemi.com smd type ic smd type transistors KDS8333C product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit v gs =0v,i s = 1.3a (not 2) n-ch 0.8 1.2 v gs =0v,i s = -1.3a (not 2) p-ch 0.8 -1.2 i f =4.1a,d if /d t = 100 a/ s n-ch 16.3 i f =-3.4a,d if /d t = 100 a/ s p-ch 14.5 i f =4.1a,d if /d t = 100 a/ s n-ch 26.7 i f =-3.4a,d if /d t = 100 a/ s p-ch 21.1 diode reverse recovery charge v sd drain-source diode forward voltage q rr testconditons nc diode reverse recovery time t rr ns v 4008-318-123 sales@twtysemi.com 3 of 3 http://www.twtysemi.com smd type ic smd type transistors KDS8333C product specification
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